Research

IRG-2: Double Perovskite Interfaces and Heterostructures

The IRG-2 interdisciplinary research team will focus on the synthesis, characterization, and modeling of double perovskite thin films and heterostructures. A wide range of phenomena are found in perovskites, ranging from ferroelectricity to superconductivity to half-metallicity, and many more. While scientists have been uncovering exciting phenomena in bulk perovskites for decades, it is only in recent years that perovskite thin films and heterostructures have been investigated in earnest. Perovskite heterostructures are of particular interest because the properties of individual layers can be varied dramatically while the common structural framework enables one to maintain epitaxial registry between layers.

The A₂BB_O₆ double perovskites are an intriguing, yet relatively unexplored, class of complex oxides. Compared to simpler ABO₃ ternary perovskites, the presence of the chemical order of B and B_ cations profoundly impacts both the electronic structure and the magnetic coupling. Of particular interest are double perovskites that exhibit half-metallic ferrimagnetism. The combination of half-metallic transport and high Curie temperature (T_C up to 725 K) make them ideal for use in spin electronic devices.

Our team possesses expertise spanning condensed matter theory, solid state chemistry, and advanced thin film growth and characterization. This knowledge is brought to bear on the challenge of harnessing the potential of half-metallic double perovskites.

Our research thrusts include:

• Development of theoretical tools to understand and predict the electronic, magnetic, and transport properties of double perovskites
• Development of routes to fabrication of highly-ordered, epitaxial films of half-metallic double perovskites in conjunction with the characterization of their structural, electronic, magnetic, and transport properties
• Design, construction, and characterization of heterostructures containing half-metallic ordered double perovskites for spin electronic applications, such as magnetic tunnel junctions (MTJ) and spin filters
• Use of interfacial phenomena (strain, charge transfer, reduced dimensionality, etc.) to control the magnetotransport and magnetoelastic properties of double perovskite thin films and heterostructures.

IRG-2 Faculty

• Leonard J. Brillson, Professor and CMR Scholar, Department of Electrical & Computer Engineering (Co-leader)
• Patrick M. Woodward, Professor, Department of Chemistry (Co-leader)
• Hamish L. Fraser, Professor and Ohio Regents Eminent Scholar, Department of Materials Science and Engineering
• Thomas R. Lemberger, Professor, Department of Physics
• Patricia A. Morris, Associate Professor, Department of Materials Science and Engineering
• Mohit Randeria, Professor, Department of Physics
• Nandini Trivedi, Professor, Department of Physics
• Wolfgang Windl, Associate Professor, Department of Materials Science and Engineering
• Fengyuan Yang, Assistant Professor, Department of Physics