Please join us as we welcome Jim McGuire, President of entrotech, inc., for a candid conversation on research, entrepreneurship, and career paths in science.
February 16, 3-4 pm in the Smith Seminar Room of the Physics Research Building (191 West Woodruff Ave)
light reception immediately following
2010 OSU Materials Week
September 13 – 15, 2010
at the new Ohio Union on OSU’s Columbus campus
This fall, the Institute for Materials Research (IMR) and the Center for Emergent Materials (CEM), OSU’s NSF Materials Research Science and Engineering Center (MRSEC), bring you the 3rd annual showcase of materials-allied research at The Ohio State University and beyond. This year’s Materials Week has an exciting, full schedule, with 3 Plenary Sessions, 3 Cross-Cutting Topics Sessions, 5 Technical Sessions, and 2 Student Poster Sessions. Continue reading
July 16th, 1:30-3:30 PM
Panel Discussion: What can I do with a PhD?
Smith Seminar Room (Room 1080, 191 W Woodruff Ave)
Undergraduates and graduate students pursuing degrees in STEM disciplines (science, technology, engineering, and mathematics) are invited to join us for a panel discussion with representatives from industry, academia, and research laboratories who will share their experiences and answer questions from the audience. Continue reading
The Center for Emergent Materials Winter Colloquium will be Wednesday, March 3, 2010 from 4-5pm in the Smith Seminar Room, Physics Research Building.
Prof. Ian Appelbaum, University of Maryland. presents “Lateral Spin Transport and Electrostatic Gating in Silicon.”
Abstract:
Silicon, the materials basis for most semiconductor electronics devices, has been known for decades to have an extraordinarily long spin lifetime. Using unique spin-polarized hot-electron injection and detection techniques, we have observed unprecedented spin coherence, and extracted very long spin lifetimes of conduction electrons traveling over macroscopic distances, even in the millimeter range. In this talk, I will discuss our recent work on lateral spin transport devices where a buried SiO2 native oxide serves as a gate dielectric to electrostatically control the proximity of spin-polarized conduction electrons to the interface. Lattice inversion symmetry breaking, and/or coupling to paramagnetic defects, drastically affects the spin lifetime, as can be seen from time-of-flight distributions extracted from spin precession measurements. Effects seen in high magnetic fields further elucidate the mechanisms relevant to electron spin relaxation at this technologically important electronic interface. Continue reading
The CEM introduced cutting-edge materials research to participants in the first mentoring event of 2010 for Ohio’s STEM Ability Alliance (OSAA), an NSF-funded Alliance for Students with Disabilities in STEM that works to increase the number of students with disabilities that complete STEM degrees. CEM Fellows Mike Hinton (Physics), Alex Holcomb (Materials Science and Engineering), and Trish Meyer (Chemistry) gave 14 undergraduate OSAA fellows and their mentors a first-hand view of pulsed laser deposition of thin films and shared the potential applications of IRG-2’s research into double perovskite interfaces and heterostructures.