International Team Develops First High-Temperature Spin-Field-Effect Transistor

An international team of researchers featuring CEM IRG-1 member and Texas A&M University physicist Dr. Jairo Sinova has announced a breakthrough that gives a new spin to semiconductor nanoelectronics and the world of information technology.

The team has developed an electrically controllable device whose functionality is based on an electron’s spin. Their results, the culmination of a 20-year scientific quest involving many international researchers and groups, are published in the current issue of “Science.”

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