Graphene in single-atom thick sheets is used in studying electrons transferring because of its superconductivity and high mobility. Graphene does not have band gap which can help in switch ON/OFF ratio in transistors when electrons move through its material. GeH and NaSn₂As₂ are new materials that have been studied in order to know their physical probabilities, and how they can make the heat and the electrons transfer through their materials. The bulk material of GeH is used in building transistors because it has an indirect band gap. GeH and NaSn₂As₂ which have van der Waals interactions among their bounds are crystal material can be exfoliated to single layer and multilayers nanosheets of layers by using PDMs method of exfoliation. Mechanically exfoliation GeH and NaSn₂As₂ crystal materials in single layers or few multilayers of nanosheets can give clean, flate, and high-quality flakes. Therefore, after exfoliation to nanosheets layers, we put them on Si/SiO₂ to distinguish between single layers and multilayers under the electronic microscope. Exfoliation of GeH to single layer or multilayer nanosheets helps in studying the directed band gap, electrons mobilities, vibration models, and fabrication. NaSn₂As₂ can also be exfoliated to single layers or few multilayers nanosheets which can help in studying their physical probabilities and the pattern chemical on their surface.