Please join us for a CEM Special Seminar
Wednesday June 2nd from 4:00-5:00 pm
Room 4138 of the Physics Research Building
Light refreshments will be served.
Dilute Nitrides and Flexible Electronics Research at NCA&TSU
Shanthi Iyer
Department of Electrical and Computer Engineering,
North Carolina A&T State University, Greensboro, NC
Dilute nitrides are an exciting new class of semiconductors based on combining group III-N with III-V materials. The large differences in the electro-negativities between N and the cations in these alloys cause a vast band gap bowing as a function of composition. Thus, these alloys with a small amount of N permit rear possibility of simultaneous reduction in the band gap and the lattice parameter, with potential long wavelength emission in otherwise wide band gap III-V materials. A brief review of our work on different mixed As-Sb-dilute N alloys, namely GaAsSbN QWs, GaSbN QWs, InGaAsSbN QWs, and thick GaAsSbN/GaAs lattice matched epilayers, grown by molecular beam epitaxy (MBE) for various optoelectronic applications will be presented.
Flexible electronics is another area of ongoing research in our group. Results on the transparent low work function inorganic material, namely GaAlAsN grown by MBE, F-doped ZnO TCO films on PEN substrates by RF sputtering, and ZnO based alloy thin film transistors will be presented. Continue reading →